Determination of acceptor concentration in GaN from photoluminescence

Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10 18 cm -3 to well above 10 19 cm -3 . The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV ...

Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study

Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAs

GaN films were grown on (100) GaAs substrates by metalorganic chemical vapor deposition and were found to be of (200) cubic or (111) cubit/(0002) hexagonal phase. Their photoluminescence characteristics remained invariant with material phase. We report assignment of band-edge photoluminescence near 3!36 eV and 3.15-3.31 eV in apparently cubic GaN to intrinsic/bound excitons and phonon-assisted,...

Optical Characterization of Lateral Epitaxial Overgrown GaN Layers

The optical properties of homoepitaxial GaN layers deposited by organometallic vapor phase epitaxy on stripe-patterned GaN films on 6H-SiC substrates have been investigated. Analysis of the spatiallyresolved Raman scattering spectra indicate an improvement in material quality of the overgrown region. Room-temperature color cathodoluminescence imaging and low-temperature photoluminescence measur...

Coaxial InGaN Epitaxy Around GaN Nano-tubes: Tracing the Signs

This work focuses on investigations of the luminescence properties of coaxial InGaN layers around single GaN nano-tubes on top of GaN micro-pyramids. The nano-tube structure was formed after the controlled desorption of ZnO nano-pillar templates during the coaxial GaN epitaxy. An intense and broad photoluminescence (PL) peak centered around 2.85 eV is attributed to transitions from a shallow do...